?2000 fairchild semiconductor international september 2000 SGH10N60RUFD rev. a igbt SGH10N60RUFD SGH10N60RUFD short circuit rated igbt general description fairchild's insulated gate bipolar transistor(igbt) rufd series provides low conduction and switching losses as well as short circuit ruggedness. rufd series is designed for the applications such as motor control, ups and general inverters where short-circuit ruggedness is required. features short circuit rated 10us @ t c = 100 c, v ge = 15v high speed switching low saturation voltage : v ce(sat) = 2.2 v @ i c = 10a high input impedance co-pak, igbt with frd : t rr = 42ns (typ.) absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description SGH10N60RUFD units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c16 a collector current @ t c = 100 c10 a i cm (1) pulsed collector current 30 a i f diode continuous forward current @ t c = 100 c12 a i fm diode maximum forward current 92 a t sc short circuit withstand time @ t c = 100 c10 us p d maximum power dissipation @ t c = 25 c75 w maximum power dissipation @ t c = 100 c30 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 1.6 c / w r jc (diode) thermal resistance, junction-to-case -- 2.5 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w application ac & dc motor controls, general purpose inverters, robotics, servo controls g c e to-3p g c e g c e
?2000 fairchild semiconductor international SGH10N60RUFD rev. a SGH10N60RUFD electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 10ma, v ce = v ge 5.0 6.0 8.5 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v -- 2.2 2.8 v i c = 16a , v ge = 15v -- 2.5 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 660 -- pf c oes output capacitance -- 115 -- pf c res reverse transfer capacitance -- 25 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 10a, r g = 20 ? , v ge = 15v, inductive load, t c = 25 c -- 15 -- ns t r rise time -- 30 -- ns t d(off) turn-off delay time -- 36 50 ns t f fall time -- 158 200 ns e on turn-on switching loss -- 141 -- uj e off turn-off switching loss -- 215 -- uj e ts total switching loss -- 356 500 uj t d(on) turn-on delay time v cc = 300 v, i c = 10a, r g = 20 ? , v ge = 15v, inductive load, t c = 125 c -- 16 -- ns t r rise time -- 33 -- ns t d(off) turn-off delay time -- 42 60 ns t f fall time -- 242 350 ns e on turn-on switching loss -- 161 -- uj e off turn-off switching loss -- 452 -- uj e ts total switching loss -- 613 860 uj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 10a, v ge = 15v -- 30 45 nc q ge gate-emitter charge -- 5 10 nc q gc gate-collector charge -- 8 16 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 12a t c = 25 c -- 1.4 1.7 v t c = 100 c -- 1.3 -- t rr diode reverse recovery time i f = 12a, di/dt = 200a/us t c = 25 c -- 42 60 ns t c = 100 c -- 60 -- i rr diode peak reverse recovery current t c = 25 c -- 3.5 6.0 a t c = 100 c -- 5.6 -- q rr diode reverse recovery charge t c = 25 c -- 80 180 nc t c = 100 c -- 220 --
?2000 fairchild semiconductor international SGH10N60RUFD rev. a SGH10N60RUFD fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 110 0 5 10 15 20 25 30 common emitter v ge = 15v t c = 25 t c = 125 ------ collector current, i c [a] collector - emitter voltage, v ce [v] 048121620 0 4 8 12 16 20 common emitter t c = 125 20a 10a i c = 5a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 2 4 6 8 10 12 14 16 0.1 1 10 100 1000 duty cycle : 50% t c = 100 power dissipation = 18w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 02468 0 5 10 15 20 25 30 35 40 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] -50 0 50 100 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20a 10a i c = 5a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, t c [ ] 048121620 0 4 8 12 16 20 common emitter t c = 25 20a 10a i c = 5a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v]
?2000 fairchild semiconductor international SGH10N60RUFD rev. a SGH10N60RUFD fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 200 400 600 800 1000 1200 1400 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v] 10 100 10 100 common emitter v cc = 300v, v ge = 15v i c = 10a t c = 25 t c = 125 ------ ton tr switching time [ns] gate resistance, r g [ ? ] 10 100 100 1000 eoff eon eoff common emitter v cc = 300v, v ge = 15v i c = 10a t c = 25 t c = 125 ------ switching loss [uj] gate resistance, r g [ ? ] 10 100 100 1000 toff tf toff tf common emitter v cc = 300v, v ge = 15v i c = 10a t c = 25 t c = 125 ------ switching time [ns] gate resistance, r g [ ? ] 6 8 10 12 14 16 18 20 10 100 ton tr common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a] 6 8 10 12 14 16 18 20 100 1000 tf toff toff tf common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 ------ switching time [ns] collector current, i c [a]
?2000 fairchild semiconductor international SGH10N60RUFD rev. a SGH10N60RUFD fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 17. transient thermal impedance of igbt fig 13. switching loss vs. collector current 0102030 0 3 6 9 12 15 v cc = 100 v 200 v 300 v common emitter r l = 30 ? t c = 25 gate - emitter voltage, v ge [ v ] gate charge, q g [ nc ] 1 10 100 1000 1 10 safe operating area v ge = 20v, t c = 100 50 collector current, i c [a] collector-emitter voltage, v ce [v] 5101520 100 1000 eon eoff common emitter v ge = 15v, r g = 20 ? t c = 25 t c = 125 ------ switching loss [uj] collector current, i c [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response, zthjc [ /w] rectangular pulse duration [sec] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c 0.1 1 10 100 1000 0.1 1 10 100 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature i c max. (continuous) i c max. (pulsed) dc operation 1 ? 100us 50us collector current, i c [a] collector-emitter voltage, v ce [v]
?2000 fairchild semiconductor international SGH10N60RUFD rev. a SGH10N60RUFD fig 19. reverse recovery current fig 18. forward characteristics fig 20. stored charge fig 21. reverse recovery time 1 10 100 0123 t c = 25 t c = 100 ------ forward voltage drop, v fm [v] forward current, i f [a] 100 1000 1 10 100 v r = 200v i f = 12a t c = 25 t c = 100 ------ reverse recovery current, i rr [a] di/dt [a/us] 100 1000 0 100 200 300 400 500 600 v r = 200v i f = 12a t c = 25 t c = 100 ------ stored recovery charge, q rr [nc] di/dt [a/us] 100 1000 0 20 40 60 80 100 v r =200v i f =12a t c = 25 t c = 100 ------ reverce recovery time, t rr [ns] di/dt [a/us]
acex? bottomless? coolfet? crossvolt? dome? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pop? powertrench ? qfet? qs? qt optoelectronics? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? ?2000 fairchild semiconductor international trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. f1
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